 |  | | |
| PartNumber | 2N5427 | 2N5427 PBFREE | 2N5420 |
| Description | Bipolar Transistors - BJT NPN Transistor | Bipolar Transistors - BJT NPN 80Vcbo 80Vceo 7.0A 40W 0.7Vce | |
| Manufacturer | Microchip | Central Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | Y | - |
| Packaging | Tray | Tube | - |
| Brand | Microchip / Microsemi | Central Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 30 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-66-2 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 80 V | - |
| Collector Base Voltage VCBO | - | 80 V | - |
| Collector Emitter Saturation Voltage | - | 0.7 V | - |
| Gain Bandwidth Product fT | - | 30 MHz | - |
| Series | - | 2N54 | - |
| DC Current Gain hFE Max | - | 120 at 2 A | - |
| Continuous Collector Current | - | 7 A | - |
| DC Collector/Base Gain hfe Min | - | 30 at 2 A | - |
| Pd Power Dissipation | - | 40 W | - |