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| PartNumber | 2N5550 | 2N5550 MAX | 2N5550 (D023) |
| Description | Bipolar Transistors - BJT NPN Gen Pur SS | ||
| Manufacturer | Central Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 140 V | - | - |
| Collector Base Voltage VCBO | 160 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.25 V | - | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2N5550 | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Packaging | Bulk | - | - |
| Width | 4.19 mm | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 0.6 A | - | - |
| DC Collector/Base Gain hfe Min | 60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V | - | - |
| Pd Power Dissipation | 625 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2N5550 PBFREE | - | - |
| Unit Weight | 0.016000 oz | - | - |