2N5781 vs 2N578 vs 2N5781S

 
PartNumber2N57812N5782N5781S
DescriptionBipolar Transistors - BJT . .
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-39-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max65 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage500 mV--
Maximum DC Collector Current3.5 A--
Gain Bandwidth Product fT60 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
Series2N5781--
DC Current Gain hFE Max150 at 1 A, 2 V--
PackagingBulk--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min20 at 1 A, 2 V--
Pd Power Dissipation10 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity500--
SubcategoryTransistors--
Part # Aliases2N5781 PBFREE--
Unit Weight0.035486 oz--
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