2N6661 vs 2N6661-2 vs 2N6661-5

 
PartNumber2N66612N6661-22N6661-5
DescriptionMOSFET 90V 4OhmMOSFET 90V 0.86A 6.25W
ManufacturerMicrochipVishay-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-39-3TO-39-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage10 V--
Id Continuous Drain Current350 mA--
Rds On Drain Source Resistance4 Ohms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation6.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingBulkBulk-
Transistor Type1 N-Channel--
TypeFET--
BrandMicrochip TechnologyVishay / Siliconix-
Forward Transconductance Min170 mS--
Product TypeMOSFETMOSFET-
Factory Pack Quantity5001-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.039133 oz--
Height-4.57 mm-
Length-8.51 mm-
Width-8.51 mm-
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