 | |  | |
| PartNumber | 2N7002DW | 2N7002DW H6327 | 2N7002DW T/R |
| Description | MOSFET N-Chan Enhancement Mode Field Effect | MOSFET N-Ch 60V 300mA SOT-363-6 | |
| Manufacturer | ON Semiconductor | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 115 mA | 300 mA | - |
| Rds On Drain Source Resistance | 7.5 Ohms | 1.6 Ohms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 200 mW | 500 mW (1/2 W) | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 0.9 mm | - |
| Length | 2 mm | 2 mm | - |
| Product | MOSFET Small Signal | - | - |
| Series | 2N7002DW | 2N7002 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 1.25 mm | 1.25 mm | - |
| Brand | ON Semiconductor / Fairchild | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 12.5 ns | 5.5 ns, 5.5 ns | - |
| Typical Turn On Delay Time | 5.85 ns | 3 ns, 3 ns | - |
| Unit Weight | 0.000988 oz | 0.000265 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
| Qg Gate Charge | - | 600 pC, 600 pC | - |
| Qualification | - | AEC-Q101 | - |
| Forward Transconductance Min | - | 200 mS, 200 mS | - |
| Fall Time | - | 3.1 ns, 3.1 ns | - |
| Rise Time | - | 3.3 ns, 3.3 ns | - |
| Part # Aliases | - | 2N7002DWH6327XTSA1 2N72DWH6327XT SP000917596 | - |