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| PartNumber | 2SC5200N(S1,E,S) | 2SC5200N(S1,X,S) | 2SC5200N(S1ES)-ND |
| Description | Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3P-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 230 V | - | - |
| Collector Base Voltage VCBO | 230 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.4 V | - | - |
| Maximum DC Collector Current | 15 A | - | - |
| Gain Bandwidth Product fT | 30 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SC5200 | - | - |
| DC Current Gain hFE Max | 160 | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 15 A | - | - |
| DC Collector/Base Gain hfe Min | 35 | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.245577 oz | - | - |