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2SD1918TLQ vs 2SD1918 vs 2SD1918TL

 
PartNumber2SD1918TLQ2SD19182SD1918TL
DescriptionBipolar Transistors - BJT NPN 160V 1.5ATrans GP BJT NPN 160V 1.5A 10000mW 3-Pin(2+Tab) CPT T/R
ManufacturerROHM SemiconductorROHMROHM
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseCPT-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max160 V--
Collector Base Voltage VCBO160 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1.5 A-1.5 A
Gain Bandwidth Product fT80 MHz-80 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Series2SD1918-2SD1918
DC Current Gain hFE Max120 at 100 mA, 5 V-120 at 0.1 A at 5 V
Height2.3 mm--
Length6.5 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width5.5 mm--
BrandROHM Semiconductor--
Continuous Collector Current1.5 A-1.5 A
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.009185 oz-0.009185 oz
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type--Surface Mount
Supplier Device Package--CPT3
Power Max--10W
Transistor Type--NPN
Current Collector Ic Max--1.5A
Voltage Collector Emitter Breakdown Max--160V
DC Current Gain hFE Min Ic Vce--120 @ 100mA, 5V
Vce Saturation Max Ib Ic--2V @ 100mA, 1A
Current Collector Cutoff Max--1μA (ICBO)
Frequency Transition--80MHz
Pd Power Dissipation--1000 mW
Collector Emitter Voltage VCEO Max--160 V
Collector Base Voltage VCBO--160 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--120
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