A2T18H100-25SR3 vs A2T18H160-24SR3 vs A2T18H160-24S

 
PartNumberA2T18H100-25SR3A2T18H160-24SR3A2T18H160-24S
DescriptionRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 VRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
ManufacturerNXPNXP-
Product CategoryRF MOSFET TransistorsRF MOSFET Transistors-
RoHSY--
TechnologySiSi-
PackagingReelReel-
BrandNXP / FreescaleNXP / Freescale-
Product TypeRF MOSFET TransistorsRF MOSFET Transistors-
Factory Pack Quantity250250-
SubcategoryMOSFETsMOSFETs-
Part # Aliases935312027128935316045128-
Unit Weight0.164793 oz0.164793 oz-
Transistor Polarity-N-Channel-
Id Continuous Drain Current-600 mA, 1 A-
Vds Drain Source Breakdown Voltage-- 500 mV, 65 V-
Gain-17.9 dB-
Output Power-28 W-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Mounting Style-SMD/SMT-
Package / Case-NI-780S-4L2L-6-
Operating Frequency-1.805 GHz to 1.88 GHz-
Type-RF Power MOSFET-
Number of Channels-2 Channel-
Vgs Gate Source Voltage-- 6 V, 10 V-
Vgs th Gate Source Threshold Voltage-1.2 V-
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