A3T21H450W23SR6 vs A3T21H400W23SR6 vs A3T21H455W23SR6

 
PartNumberA3T21H450W23SR6A3T21H400W23SR6A3T21H455W23SR6
DescriptionRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 VRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 VRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V
ManufacturerNXPNXPNXP
Product CategoryRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
RoHSYYY
Transistor PolarityDual N-ChannelDual N-ChannelDual N-Channel
TechnologySiSiSi
Id Continuous Drain Current3.6 A3.2 A3.6 A
Vds Drain Source Breakdown Voltage- 500 mV, 65 V- 500 mV, 65 V- 500 mV, 65 V
Gain15.4 dB-15 dB
Output Power87 W-87 W
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseACP-1230S-4L2SACP-1230S-4ACP-1230S-4L2S
PackagingReelReelReel
Operating Frequency2110 MHz to 2200 MHz2110 MHz to 2200 MHz2110 MHz to 2200 MHz
TypeRF Power MOSFETRF Power MOSFETRF Power MOSFET
BrandNXP SemiconductorsNXP SemiconductorsNXP Semiconductors
Number of Channels2 Channel2 Channel2 Channel
Product TypeRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
Factory Pack Quantity150150150
SubcategoryMOSFETsMOSFETsMOSFETs
Vgs Gate Source Voltage- 6 V, 10 V- 6 V, 10 V- 6 V, 10 V
Vgs th Gate Source Threshold Voltage1.4 V0.8 V, 1.4 V1.4 V
Part # Aliases935352756128935372908128935368316128
Unit Weight0.212803 oz--
Series-A3T21H400W23-
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