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| PartNumber | APTCV60HM45BC20T3G | APTCV50H60T3G | APTCV40H60CT1G |
| Description | Discrete Semiconductor Modules Power Module - Coolmos | IGBT Modules DOR CC3133 | IGBT Modules DOR CC8004 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Discrete Semiconductor Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | Discrete Semiconductor Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
| Product | - | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | - | Full Bridge | Full Bridge |
| Collector Emitter Voltage VCEO Max | - | 600 V | 600 V |
| Collector Emitter Saturation Voltage | - | 1.5 V | 1.5 V |
| Continuous Collector Current at 25 C | - | 80 A | 80 A |
| Gate Emitter Leakage Current | - | 600 nA | 600 nA |
| Pd Power Dissipation | - | 176 W | 176 W |
| Package / Case | - | SP3-32 | SP1-12 |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Maximum Operating Temperature | - | + 100 C | + 100 C |
| Mounting Style | - | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | - | 20 V | 20 V |
| Unit Weight | - | - | 2.821917 oz |