APTGT300A120D3G vs APTGT300A120G vs APTGT300A170

 
PartNumberAPTGT300A120D3GAPTGT300A120GAPTGT300A170
DescriptionIGBT Modules DOR CC7060IGBT Modules CC6106
ManufacturerMicrochipMicrochip-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max1.2 kV1.2 kV-
Collector Emitter Saturation Voltage1.7 V1.7 V-
Continuous Collector Current at 25 C440 A420 A-
Gate Emitter Leakage Current400 nA600 nA-
Pd Power Dissipation1.45 kW1.38 kW-
Package / CaseD3-11SP6-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 100 C-
PackagingBulkTube-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
Unit Weight-3.880136 oz-
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