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| PartNumber | AUIRF1010EZ | AUIRF1010EZS | AUIRF1010EZL |
| Description | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 84 A | 84 A | - |
| Rds On Drain Source Resistance | 8.5 mOhms | 8.5 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 58 nC | 58 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Pd Power Dissipation | 140 W | 140 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Fall Time | 54 ns | 54 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 90 ns | 90 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 38 ns | 38 ns | - |
| Typical Turn On Delay Time | 19 ns | 19 ns | - |
| Part # Aliases | SP001519970 | SP001516450 | - |
| Unit Weight | 0.211644 oz | 0.139332 oz | - |