![]() | ![]() | ||
| PartNumber | AUIRFS8407-7P | AUIRFS8407-7 | AUIRFS8407-7PPBF |
| Description | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | ||
| Manufacturer | Infineon | International Rectifier | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 240 A | - | - |
| Rds On Drain Source Resistance | 1.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.9 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 150 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 230 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | CoolIRFet | CoolIRFet | - |
| Packaging | Tube | Tube | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 122 S | - | - |
| Fall Time | 51 ns | 51 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 62 ns | 62 ns | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 78 ns | 78 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Part # Aliases | SP001518052 | - | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Package Case | - | TO-263-7 | - |
| Pd Power Dissipation | - | 230 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 240 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.2 V to 3.9 V | - |
| Rds On Drain Source Resistance | - | 1.3 mOhms | - |
| Qg Gate Charge | - | 150 nC | - |
| Forward Transconductance Min | - | 122 S | - |