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| PartNumber | BC639 | BC639 100-250 | BC639(TO-92) |
| Description | Bipolar Transistors - BJT | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | N | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 200 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC639 | - | - |
| DC Current Gain hFE Max | 25 at 5 mA, 2 V | - | - |
| Height | 4.01 mm | - | - |
| Length | 4.77 mm | - | - |
| Width | 2.41 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 25 at 5 mA, 2 V, 40 at 150 mA, 2 V, 25 at 500 mA, 2 V | - | - |
| Pd Power Dissipation | 625 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.016000 oz | - | - |