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| PartNumber | BC817-40-7-F | BC817-40 | BC81740DGB2 |
| Description | Bipolar Transistors - BJT NPN BIPOLAR | Bipolar Transistors - BJT Transistor 300mW | |
| Manufacturer | Diodes Incorporated | Taiwan Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 700 mV | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC817 | BC817-xx | - |
| Height | 1 mm | - | - |
| Length | 3.05 mm | - | - |
| Packaging | Reel | Reel | - |
| Width | 1.4 mm | - | - |
| Brand | Diodes Incorporated | Taiwan Semiconductor | - |
| DC Collector/Base Gain hfe Min | 170 at 300 mA, 1 V | - | - |
| Pd Power Dissipation | 310 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |