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| PartNumber | BC 817K-40 E6327 | BC 817K-40 E6433 | BC817K-40E6359 |
| Description | Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5 | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
| Collector Base Voltage VCBO | 50 V | 50 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.7 V | 0.7 V | - |
| Maximum DC Collector Current | 1000 mA | 1000 mA | - |
| Gain Bandwidth Product fT | 170 MHz | 170 MHz | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC 817K | BC 817K | - |
| DC Current Gain hFE Max | 630 at 100 mA, 1 V | 630 at 100 mA, 1 V | - |
| Height | 1 mm | 1 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Packaging | Reel | Reel | - |
| Width | 1.3 mm | 1.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Continuous Collector Current | 500 mA | 500 mA | - |
| DC Collector/Base Gain hfe Min | 250 at 100 mA, 1 V | 250 at 100 mA, 1 V | - |
| Pd Power Dissipation | 500 mW | 500 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BC817K40E6327HTSA1 BC817K4E6327XT SP000271895 | BC817K40E6433HTMA1 BC817K4E6433XT SP000271898 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |