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| PartNumber | BC847BE6433HTMA1 | BC 847B E6433 | BC847BE6433XT |
| Description | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
| Collector Base Voltage VCBO | 50 V | 50 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 200 mV | 200 mV | - |
| Maximum DC Collector Current | 200 mA | 200 mA | - |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC847 | BC 847B | - |
| DC Current Gain hFE Max | 450 | 450 | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| DC Collector/Base Gain hfe Min | 200 | 200 | - |
| Pd Power Dissipation | 330 mW | 330 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 10000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 847B BC BC847BE6433XT E6433 SP000010576 | BC847BE6433HTMA1 BC847BE6433XT SP000010576 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Height | - | 1 mm | - |
| Length | - | 2.9 mm | - |
| Width | - | 1.3 mm | - |