BC856A-T vs BC856AT TR vs BC856AT , MAX6337US20D3

 
PartNumberBC856A-TBC856AT TRBC856AT , MAX6337US20D3
DescriptionBipolar Transistors - BJT Transistor PNPBipolar Transistors - BJT PNP 80Vcbo 65Vceo 5.0Vebo 100mA 250mW
ManufacturerRectronCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-523-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max65 V65 V-
Collector Base Voltage VCBO80 V80 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.65 V0.4 V-
Maximum DC Collector Current0.1 A200 mA-
Gain Bandwidth Product fT100 MHz100 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC8BC856AT-
DC Current Gain hFE Max250250-
Height1.15 mm--
Length3 mm--
PackagingReelReel-
Width1.4 mm--
BrandRectronCentral Semiconductor-
DC Collector/Base Gain hfe Min125125-
Pd Power Dissipation250 mW250 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz--
Technology-Si-
Minimum Operating Temperature-- 65 C-
Continuous Collector Current-100 mA-
Part # Aliases-BC856AT PBFREE TR-
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