BC858B TR vs BC858BT116 vs BC858BTA

 
PartNumberBC858B TRBC858BT116BC858BTA
DescriptionBipolar Transistors - BJT PNP 30Vebo 30Vceo 5.0Vebo 100mA 350mWBipolar Transistors - BJT PNP 30V 1MASmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
ManufacturerCentral SemiconductorROHM Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SST-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max30 V- 30 V-
Collector Base Voltage VCBO30 V- 30 V-
Emitter Base Voltage VEBO5 V- 5 V-
Collector Emitter Saturation Voltage0.65 V- 0.65 V-
Maximum DC Collector Current200 mA0.1 A-
Gain Bandwidth Product fT100 MHz250 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC858BBC858B-
DC Current Gain hFE Max475 at 2 mA, 5 V480-
PackagingReelReel-
BrandCentral SemiconductorROHM Semiconductor-
Continuous Collector Current100 mA- 0.1 A-
DC Collector/Base Gain hfe Min220 at 2 mA, 5 V210-
Pd Power Dissipation350 mW350 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # AliasesBC858B PBFREE TRBC858B-
Height-0.95 mm-
Length-2.9 mm-
Width-1.3 mm-
Unit Weight-0.001058 oz-
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