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| PartNumber | BC858C | BC 858C E6327 | BC858C T116 |
| Description | Bipolar Transistors - BJT Transistor 200mW | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | |
| Manufacturer | Taiwan Semiconductor | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Packaging | Reel | Reel | - |
| Brand | Taiwan Semiconductor | Infineon Technologies | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Dual | - |
| Collector Emitter Voltage VCEO Max | - | 30 V | - |
| Collector Base Voltage VCBO | - | 30 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Collector Emitter Saturation Voltage | - | 250 mV | - |
| Maximum DC Collector Current | - | 200 mA | - |
| Gain Bandwidth Product fT | - | 250 MHz | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Series | - | BC858 | - |
| DC Current Gain hFE Max | - | 800 | - |
| Height | - | 1 mm | - |
| Length | - | 2.9 mm | - |
| Width | - | 1.3 mm | - |
| Continuous Collector Current | - | 100 mA | - |
| DC Collector/Base Gain hfe Min | - | 420 | - |
| Pd Power Dissipation | - | 330 mW | - |
| Part # Aliases | - | BC858CE6327HTSA1 BC858CE6327XT SP000010624 | - |