BC859CLT1 vs BC859CLT1G vs BC859CLT116

 
PartNumberBC859CLT1BC859CLT1GBC859CLT116
DescriptionBipolar Transistors - BJT 100mA 30V PNPBipolar Transistors - BJT 100mA 30V PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 30 V- 30 V-
Collector Base Voltage VCBO- 30 V- 30 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage- 0.65 V- 0.65 V-
Maximum DC Collector Current0.1 A0.1 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height0.94 mm0.94 mm-
Length2.9 mm2.9 mm-
PackagingReelReel-
Width1.3 mm1.3 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 0.1 A- 0.1 A-
DC Collector/Base Gain hfe Min420420-
Pd Power Dissipation225 mW225 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz-
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