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| PartNumber | BCM846BSX | BCM846BS-7 | BCM846S |
| Description | Bipolar Transistors - BJT NPN/NPN Matched Double Transistor | Bipolar Transistors - BJT General Purpose Transistor | |
| Manufacturer | Nexperia | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSSOP-6 | SOT-363-6 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 65 V | 65 V | - |
| Collector Base Voltage VCBO | 80 V | 80 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 200 mV | 400 mV | - |
| Maximum DC Collector Current | 200 mA | 100 mA | - |
| Gain Bandwidth Product fT | 250 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 450 at 2 mA, 5 V | 450 | - |
| Packaging | Reel | Reel | - |
| Brand | Nexperia | Diodes Incorporated | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| DC Collector/Base Gain hfe Min | 200 | 200 | - |
| Pd Power Dissipation | 300 mW | 200 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |