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| PartNumber | BCM847DS,115 | BCM847DS,135 | BCM847DS |
| Description | Bipolar Transistors - BJT TRANS MATCHED PAIR | Bipolar Transistors - BJT TRANS MATCHED PAIR | TRANSISTOR NXP BCM847DS, PK |
| Manufacturer | Nexperia | Nexperia | NXP |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Arrays |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-457-6 | SOT-457-6 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
| Collector Base Voltage VCBO | 50 V | 50 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Maximum DC Collector Current | 0.1 A | 0.1 A | - |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 200 at 2 mA, 5 V | 200 at 2 mA, 5 V | - |
| Height | 1 mm | 1 mm | - |
| Length | 3.1 mm | 3.1 mm | - |
| Packaging | Reel | Reel | - |
| Width | 1.7 mm | 1.7 mm | - |
| Brand | Nexperia | Nexperia | - |
| DC Collector/Base Gain hfe Min | 200 at 2 mA, 5 V | 200 at 2 mA, 5 V | - |
| Pd Power Dissipation | 380 mW | 380 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BCM847DS T/R | /T3 BCM847DS | - |
| Unit Weight | 0.000381 oz | - | - |