BCP53-16T1G vs BCP5316TA vs BCP53 16T1

 
PartNumberBCP53-16T1GBCP5316TABCP53 16T1
DescriptionBipolar Transistors - BJT 1.5A 100V PNPBipolar Transistors - BJT PNP Medium Power
ManufacturerON SemiconductorDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 80 V- 80 V-
Collector Base Voltage VCBO- 100 V- 100 V-
Emitter Base Voltage VEBO5 V- 5 V-
Collector Emitter Saturation Voltage- 0.5 V- 0.5 V-
Maximum DC Collector Current1.5 A- 1 A-
Gain Bandwidth Product fT50 MHz125 MHz-
Minimum Operating Temperature- 65 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBCP53BCP53-
Height1.57 mm1.65 mm-
Length6.5 mm6.7 mm-
PackagingReelReel-
Width3.5 mm3.7 mm-
BrandON SemiconductorDiodes Incorporated-
Continuous Collector Current1.5 A- 1 A-
DC Collector/Base Gain hfe Min2525 at - 5 mA, - 2 V-
Pd Power Dissipation1.5 W2 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
DC Current Gain hFE Max-250 at - 150 mA, - 2 V-
Top