BCP55 vs BCP55TA vs BCP55 T/P

 
PartNumberBCP55BCP55TABCP55 T/P
DescriptionBipolar Transistors - BJT SOT-223 NPN GP AMPBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
ManufacturerON SemiconductorDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V500 mV-
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT100 MHz150 MHz-
Minimum Operating Temperature- 65 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBCP55BCP55-
DC Current Gain hFE Max250250-
Height1.6 mm--
Length6.5 mm--
PackagingReelReel-
Width3.56 mm--
BrandON Semiconductor / FairchildDiodes Incorporated-
Continuous Collector Current1.5 A--
DC Collector/Base Gain hfe Min4040-
Pd Power Dissipation1.5 W2000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity40001000-
SubcategoryTransistorsTransistors-
Part # AliasesBCP55_NL--
Unit Weight0.003951 oz0.003951 oz-
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