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| PartNumber | BCW 68G E6327 | BCW68GE6327HTSA1 | BCW68GE6327MM044317) |
| Description | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
| Collector Base Voltage VCBO | 60 V | 60 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.7 V | 0.7 V | - |
| Maximum DC Collector Current | 1 A | 1 A | - |
| Gain Bandwidth Product fT | 200 MHz | 200 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BCW68 | BCW68 | - |
| DC Current Gain hFE Max | 400 | 400 | - |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | Reel | - |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Continuous Collector Current | 800 mA | 800 mA | - |
| DC Collector/Base Gain hfe Min | 160 | 160 | - |
| Pd Power Dissipation | 330 mW | 330 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BCW68GE6327HTSA1 BCW68GE6327XT SP000015039 | 68G BCW BCW68GE6327XT E6327 SP000015039 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |