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BCX 55-16 E6327 vs BCX55-16 BM vs BCX5516

 
PartNumberBCX 55-16 E6327BCX55-16 BMBCX5516
DescriptionBipolar Transistors - BJT NPN Silicon AF TRANSISTORSmall Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
ManufacturerInfineonDiodes Incorporated
Product CategoryBipolar Transistors - BJTIC ChipsTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-89-4--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.5 V-500 mV
Maximum DC Collector Current1 A-1.5 A
Gain Bandwidth Product fT100 MHz-150 MHz
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesBCX55-BCX55
Height1.5 mm--
Length4.5 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width2.5 mm--
BrandInfineon Technologies--
Continuous Collector Current1 A--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # AliasesBCX5516E6327HTSA1 SP000010920--
Unit Weight0.004603 oz-0.001834 oz
Package Case--TO-243AA
Mounting Type--Surface Mount
Supplier Device Package--SOT-89-3
Power Max--1W
Transistor Type--NPN
Current Collector Ic Max--1A
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--100 @ 150mA, 2V
Vce Saturation Max Ib Ic--500mV @ 50mA, 500mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--150MHz
Pd Power Dissipation--1000 mW
Collector Emitter Voltage VCEO Max--60 V
Collector Base Voltage VCBO--60 V
Emitter Base Voltage VEBO--6 V
DC Collector Base Gain hfe Min--25 at 5 mA 2 V
DC Current Gain hFE Max--100 at 150 mA at 2 V
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