BCX 55-16 E6327 vs BCX5516 vs BCX5516E6327HTSA1

 
PartNumberBCX 55-16 E6327BCX5516BCX5516E6327HTSA1
DescriptionBipolar Transistors - BJT NPN Silicon AF TRANSISTORSmall Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AATrans GP BJT NPN 60V 1A 4-Pin(3+Tab) SOT-89 T/R - Bulk (Alt: BCX5516E6327HTSA1)
ManufacturerInfineonDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-4--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.5 V500 mV-
Maximum DC Collector Current1 A1.5 A-
Gain Bandwidth Product fT100 MHz150 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBCX55BCX55-
Height1.5 mm--
Length4.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width2.5 mm--
BrandInfineon Technologies--
Continuous Collector Current1 A--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # AliasesBCX5516E6327HTSA1 SP000010920--
Unit Weight0.004603 oz0.001834 oz-
Package Case-TO-243AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-89-3-
Power Max-1W-
Transistor Type-NPN-
Current Collector Ic Max-1A-
Voltage Collector Emitter Breakdown Max-60V-
DC Current Gain hFE Min Ic Vce-100 @ 150mA, 2V-
Vce Saturation Max Ib Ic-500mV @ 50mA, 500mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-150MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-60 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-25 at 5 mA 2 V-
DC Current Gain hFE Max-100 at 150 mA at 2 V-
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