BD13516S vs BD13516STU vs BD135-16

 
PartNumberBD13516SBD13516STUBD135-16
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Silicon Trnsistr
ManufacturerON SemiconductorON SemiconductorSTMicroelectronics
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-126-3TO-126-3SOT-32-3
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max45 V45 V45 V
Collector Base Voltage VCBO45 V45 V45 V
Emitter Base Voltage VEBO5 V5 V5 V
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current1.5 A1.5 A1.5 A
Minimum Operating Temperature- 55 C- 55 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesBD135BD135BD135
DC Current Gain hFE Max250250-
Height1.5 mm1.5 mm10.8 mm
Length8 mm8 mm7.8 mm
PackagingBulkTubeTube
Width3.25 mm3.25 mm2.7 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildSTMicroelectronics
Continuous Collector Current1.5 A1.5 A-
DC Collector/Base Gain hfe Min4040-
Pd Power Dissipation12.5 W12.5 W1250 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity200019202000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.028219 oz0.026843 oz0.002116 oz
Part # Aliases-BD13516STU_NL-
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