BD139-10 vs BD13910STU vs BD13910S


PartNumber	BD139-10	BD13910STU	BD13910S
Description	Bipolar Transistors - BJT NPN Silicon Trnsistr	Bipolar Transistors - BJT NPN Si Transistor Epitaxial	Bipolar Transistors - BJT NPN Epitaxial Sil
Manufacturer	STMicroelectronics	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y	Y
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	SOT-32-3	TO-126-3	TO-126-3
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	80 V	80 V	80 V
Collector Base Voltage VCBO	80 V	80 V	80 V
Emitter Base Voltage VEBO	5 V	5 V	5 V
Maximum DC Collector Current	1.5 A	1.5 A	1.5 A
Minimum Operating Temperature	- 65 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	BD139	BD139	BD139
Height	10.8 mm	1.5 mm	1.5 mm
Length	7.8 mm	8 mm	8 mm
Packaging	Tube	Tube	Bulk
Width	2.7 mm	3.25 mm	3.25 mm
Brand	STMicroelectronics	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
DC Collector/Base Gain hfe Min	63	40	40
Pd Power Dissipation	1250 mW	12.5 W	12.5 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	2000	1920	2000
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.002116 oz	0.026843 oz	0.026843 oz
Collector Emitter Saturation Voltage	-	0.5 V	0.5 V
DC Current Gain hFE Max	-	250	160
Continuous Collector Current	-	1.5 A	1.5 A
Part # Aliases	-	BD13910STU_NL	BD13910S_NL