![]() | |||
| PartNumber | BFP 410 H6327 | BFP410H6327XTSA1 | BFP410 |
| Description | RF Bipolar Transistors RF BIP TRANSISTORS | RF Bipolar Transistors RF BIP TRANSISTORS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
| RoHS | Y | - | - |
| Series | BFP410 | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | Si | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Collector Emitter Voltage VCEO Max | 4.5 V | - | - |
| Emitter Base Voltage VEBO | 1.5 V | - | - |
| Continuous Collector Current | 40 mA | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343 | SOT-343-4 | - |
| Packaging | Reel | Reel | - |
| Operating Frequency | 25 GHz | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BFP410H6327XTSA1 BFP41H6327XT SP000762244 | 410 BFP BFP41H6327XT H6327 SP000762244 | - |
| Unit Weight | 0.000244 oz | - | - |