 |  | | |
| PartNumber | BFQ 19S E6327 | BFQ19SE6327 , SSF5853DC | BFQ19SE6327HTSA1 |
| Description | Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR | ||
| Manufacturer | Infineon | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 15 V | - | - |
| Collector Base Voltage VCBO | 20 V | - | - |
| Emitter Base Voltage VEBO | 3 V | - | - |
| Maximum DC Collector Current | 0.21 A | - | - |
| Gain Bandwidth Product fT | 5500 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BFQ19 | - | - |
| Height | 1.5 mm | - | - |
| Length | 4.5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 0.21 A | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BFQ19SE6327HTSA1 SP000011042 | - | - |