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| PartNumber | BFR840L3RHESDE6327XTSA1 | BFR 840L3RHESD E6327 | BFR840L3RHESDE6327XTSA1-CUT TAPE |
| Description | RF Bipolar Transistors RF BIP TRANSISTORS | RF Bipolar Transistors RF BIP TRANSISTORS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
| RoHS | Y | Y | - |
| Series | BFR840L3 | BFR840L3 | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | Si | - |
| Collector Emitter Voltage VCEO Max | 2.25 V | - | - |
| Emitter Base Voltage VEBO | 2.9 V | - | - |
| Continuous Collector Current | 35 mA | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSLP-3 | - | - |
| Packaging | Reel | Reel | - |
| Operating Frequency | 75 GHz | - | - |
| Type | RF Silicon Germanium | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Pd Power Dissipation | 75 mW | - | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 15000 | 15000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 840L3RHESD BFR BFR84L3RHESDE6327XT E6327 SP000978848 | BFR840L3RHESDE6327XTSA1 BFR84L3RHESDE6327XT SP000978848 | - |