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| PartNumber | BFU550WX | BFU550WF | BFU550WX-CUT TAPE |
| Description | RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor | RF Bipolar Transistors NPN wideband silicon RF transistor | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
| RoHS | Y | Y | - |
| Transistor Type | Bipolar Wideband | - | - |
| Technology | Si | Si | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Collector Emitter Voltage VCEO Max | 16 V | - | - |
| Emitter Base Voltage VEBO | 2 V | - | - |
| Continuous Collector Current | 15 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT323-3 | - | - |
| Packaging | Reel | Reel | - |
| Collector Base Voltage VCBO | 24 V | - | - |
| DC Current Gain hFE Max | 200 | - | - |
| Operating Frequency | 900 MHz | - | - |
| Operating Temperature Range | - 40 C to + 150 C | - | - |
| Type | Wideband RF Transistor | - | - |
| Brand | NXP Semiconductors | NXP Semiconductors | - |
| Gain Bandwidth Product fT | 11 GHz | - | - |
| Maximum DC Collector Current | 80 mA | - | - |
| Pd Power Dissipation | 450 mW | - | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 934067695115 | 934067695135 | - |
| Unit Weight | 0.000196 oz | 0.000196 oz | - |