BSC018N04LS G vs BSC018N04LSGATMA1 vs BSC018N04LSG-S

 
PartNumberBSC018N04LS GBSC018N04LSGATMA1BSC018N04LSG-S
DescriptionMOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance1.5 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge150 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min90 S--
Fall Time9 ns--
Product TypeMOSFETMOSFET-
Rise Time7.4 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesBSC018N04LSGATMA1 BSC18N4LSGXT SP000388293BSC018N04LS BSC18N4LSGXT G SP000388293-
Unit Weight0.004938 oz--
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