BSC070N10NS3 G vs BSC070N10LS5ATMA1 vs BSC070N10NS

 
PartNumberBSC070N10NS3 GBSC070N10LS5ATMA1BSC070N10NS
DescriptionMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3MOSFET TRENCH >=100V
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTDSON-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance6.3 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge55 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation114 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS-OptiMOS
PackagingReelReelReel
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3BSC070N10OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width5.15 mm--
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min36 S--
Fall Time8 ns--
Product TypeMOSFETMOSFET-
Rise Time10 ns--
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesBSC070N10NS3GATMA1 BSC7N1NS3GXT SP000778082BSC070N10LS5 SP001861044-
Unit Weight0.003527 oz--
Part Aliases--BSC070N10NS3GATMA1 BSC070N10NS3GXT SP000778082
Package Case--TDSON-8
Id Continuous Drain Current--90 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--7 mOhms
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