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| PartNumber | BSC093N04LS G | BSC093N04LSGATMA1 | BSC093N04LSGATMA1 , TDZ |
| Description | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 | MOSFET N-CH 40V 49A TDSON-8 | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 49 A | - | - |
| Rds On Drain Source Resistance | 9.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 35 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | OptiMOS | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 34 S | - | - |
| Fall Time | 2.8 ns | 2.8 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.4 ns | 2.4 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | 16 ns | - |
| Typical Turn On Delay Time | 3.6 ns | 3.6 ns | - |
| Part # Aliases | BSC093N04LSGATMA1 BSC93N4LSGXT SP000387929 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | BSC093N04LS BSC093N04LSGXT G SP000387929 | - |
| Package Case | - | 8-PowerTDFN | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PG-TDSON-8 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 35W | - |
| Drain to Source Voltage Vdss | - | 40V | - |
| Input Capacitance Ciss Vds | - | 1900pF @ 20V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 13A (Ta), 49A (Tc) | - |
| Rds On Max Id Vgs | - | 9.3 mOhm @ 40A, 10V | - |
| Vgs th Max Id | - | 2V @ 14μA | - |
| Gate Charge Qg Vgs | - | 24nC @ 10V | - |
| Pd Power Dissipation | - | 35 W | - |
| Vgs Gate Source Voltage | - | +/- 20 V | - |
| Id Continuous Drain Current | - | 49 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Rds On Drain Source Resistance | - | 9.3 mOhms | - |
| Qg Gate Charge | - | 18 nC | - |
| Forward Transconductance Min | - | 67 S | - |