 |  |  | |
| PartNumber | BSC12DN20NS3 G | BSC12DN20NS3GXT | BSC12DN20NS3GATMA1 |
| Description | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1) | MOSFET N-CH 200V 11.3A 8TDSON |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 11.3 A | - | - |
| Rds On Drain Source Resistance | 108 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 8.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | BSC12DN20 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 6 S | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | BSC12DN20NS3GATMA1 BSC12DN2NS3GXT SP000781774 | - | - |