 | |  | |
| PartNumber | BSC886N03LS G | BSC886N03LSGATMA1 | BSC886N03LSG E8178 |
| Description | MOSFET N-Ch 30V 65A TDSON-8 | MOSFET LV POWER MOS | |
| Manufacturer | Infineon | Infineon | INFINEON |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 65 A | - | - |
| Rds On Drain Source Resistance | 6 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | BSC886N03 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.2 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 4.2 ns | - | - |
| Part # Aliases | BSC886N03LSGATMA1 BSC886N3LSGXT SP000475950 | BSC886N03LS BSC886N3LSGXT G SP000475950 | - |