BSM75GB120DN2 vs BSM75GB120DN2(SCH100) vs BSM75GB120DN2E3223

 
PartNumberBSM75GB120DN2BSM75GB120DN2(SCH100)BSM75GB120DN2E3223
DescriptionIGBT Modules 1200V 75A DUAL
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationHalf Bridge--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C105 A--
Gate Emitter Leakage Current320 nA--
Pd Power Dissipation625 W--
Package / CaseHalf Bridge1--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height30.5 mm--
Length94 mm--
Width34 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM75GB120DN2HOSA1 SP000095923--
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