BSO203P H vs BSO203PHXUMA1 vs BSO203P

 
PartNumberBSO203P HBSO203PHXUMA1BSO203P
DescriptionMOSFET P-Ch -20V -8.2A DSO-8 OptiMOS PMOSFET SMALL SIGNAL+P-CH- Bulk (Alt: BSO203P)
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8SO-8-
Number of Channels2 Channel1 Channel2 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current8.2 A--
Rds On Drain Source Resistance21 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge- 26 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2 W--
ConfigurationDualSingleDual
Channel ModeEnhancement-Enhancement
TradenameOptiMOS-OptiMOS
PackagingReelReelReel
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
SeriesOptiMOS P-OptiMOS P
Transistor Type2 P-Channel1 P-Channel2 P-Channel
Width3.9 mm3.9 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min33 S--
Fall Time74 ns-74 ns
Moisture SensitiveYes--
Product TypeMOSFETMOSFET-
Rise Time55 ns-55 ns
Factory Pack Quantity2500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time45 ns-45 ns
Typical Turn On Delay Time16 ns-16 ns
Part # AliasesBSO203PHXUMA1 BSO23PHXT SP000613858BSO203P BSO23PHXT H SP000613858-
Unit Weight0.019048 oz0.019048 oz-
Part Aliases--BSO203PHXT BSO203PHXUMA1 SP000613858
Package Case--DSO-8
Pd Power Dissipation--2 W
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--- 8.2 A
Vds Drain Source Breakdown Voltage--- 20 V
Rds On Drain Source Resistance--21 mOhms
Qg Gate Charge--- 26 nC
Forward Transconductance Min--33 S
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