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| PartNumber | BSP317P H6327 | BSP317P | BSP317PE6327 |
| Description | MOSFET P-Ch -250V -430mA SOT-223-3 | MOSFET P-CH 250V 0.43A SOT223 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 430 mA | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | - 15.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP317 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 380 mS | - | - |
| Fall Time | 67 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11.1 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 254 ns | - | - |
| Typical Turn On Delay Time | 5.7 ns | - | - |
| Part # Aliases | BSP317PH6327XTSA1 SP001058758 | - | - |
| Unit Weight | 0.003951 oz | - | - |