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| PartNumber | BSS209PW L6327 | BSS209PW | BSS209PW H6327 |
| Description | MOSFET P-Ch -20V 580mA SOT-323-3 | MOSFET P-CH 20V 580MA SOT-323 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 580 mA | - | - |
| Rds On Drain Source Resistance | 550 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 520 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | BSS209 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 5.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 7.6 ns | - | - |
| Typical Turn On Delay Time | 4.4 ns | - | - |
| Part # Aliases | BSS209PWL6327XT | - | - |
| Unit Weight | 0.000176 oz | - | - |