 |  | | |
| PartNumber | BSS223PW H6327 | BSS223PW | BSS223PW E6327 |
| Description | MOSFET P-Ch -20V -390mA SOT-323-3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 390 mA | - | - |
| Rds On Drain Source Resistance | 2.1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 2.5 V | - | - |
| Qg Gate Charge | - 0.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | BSS223 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 0.35 S | - | - |
| Fall Time | 3.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 5.1 ns | - | - |
| Typical Turn On Delay Time | 3.8 ns | - | - |
| Part # Aliases | BSS223PWH6327XT BSS223PWH6327XTSA1 SP000843010 | - | - |
| Unit Weight | 0.000176 oz | - | - |