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| PartNumber | BSS670S2L H6327 | BSS670S2LH6327 , MAX6383 | BSS670S2LH6327/SN |
| Description | MOSFET N-Ch 55V 540mA SOT-23-3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 540 mA | - | - |
| Rds On Drain Source Resistance | 345 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 2.26 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 360 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | BSS670S2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 600 mS | - | - |
| Fall Time | 24 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | BSS670S2LH6327XTSA1 BSS67S2LH6327XT SP000928950 | - | - |
| Unit Weight | 0.000282 oz | - | - |