 | | | |
| PartNumber | BSZ100N03 | BSZ100N03L | BSZ100N03LS |
| Description | |||
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | OptiMOS 3 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | BSZ100N03LSGATMA1 BSZ100N03LSGXT SP000304135 |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TSDSON-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Quad Drain Triple Source |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 2.1 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 2.4 ns |
| Rise Time | - | - | 2.6 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 12 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 10 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 13 ns |
| Typical Turn On Delay Time | - | - | 2.9 ns |
| Channel Mode | - | - | Enhancement |