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| PartNumber | BTS244ZE3062AATMA2 | BTS244Z E3062A | BTS244ZE3062AATMA1 |
| Description | MOSFET N-Ch 55V 19A D2PAK-4 | MOSFET N-Ch 55V 44A D2PAK-4 | Power Field-Effect Transisto |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-5 | TO-263-5 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 19 A | 44 A | - |
| Rds On Drain Source Resistance | 13 mOhms | 13 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 85 nC | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 170 W | 170 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 25 S | - | - |
| Fall Time | 25 ns | 25 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 70 ns | 70 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | - |
| Typical Turn On Delay Time | 15 ns | 15 ns | - |
| Part # Aliases | BTS244Z E3062A SP000910844 | BTS244ZE3062AATMA1 SP000399004 | - |
| Unit Weight | 0.056438 oz | - | - |
| RoHS | - | Y | - |
| Series | - | BTS244 | - |