BUK962R5-60E,118 vs BUK962R1-40E,118 vs BUK962R1-40E

 
PartNumberBUK962R5-60E,118BUK962R1-40E,118BUK962R1-40E
DescriptionMOSFET N-channel TrenchMOS intermed level FETMOSFET N-CH 40V 120A D2PAK
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance2.5 mOhms--
Vgs Gate Source Voltage2.1 V--
Pd Power Dissipation357 W--
ConfigurationSingle--
QualificationAEC-Q101--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
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