BUK9K18-40E,115 vs BUK9K18-40E vs BUK9K18-40E,115-CUT TAPE

 
PartNumberBUK9K18-40E,115BUK9K18-40EBUK9K18-40E,115-CUT TAPE
DescriptionMOSFET Dual N-channel 40 V 19.5 mo FET
ManufacturerNexperia-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56D-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance17.1 mOhms--
Vgs th Gate Source Threshold Voltage1.7 V--
Vgs Gate Source Voltage15 V--
Qg Gate Charge14.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation38 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type2 N-Channel--
BrandNexperia--
Fall Time9.9 ns--
Product TypeMOSFET--
Rise Time4.6 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17.5 ns--
Typical Turn On Delay Time4 ns--
Unit Weight0.003534 oz--
Series-Automotive, AEC-Q101, TrenchMOS-
Package Case-SOT-1205, 8-LFPAK56-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-LFPAK56D-
FET Type-2 N-Channel (Dual)-
Power Max-38W-
Drain to Source Voltage Vdss-40V-
Input Capacitance Ciss Vds-1061pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-30A-
Rds On Max Id Vgs-16 mOhm @ 10A, 10V-
Vgs th Max Id-2.1V @ 1mA-
Gate Charge Qg Vgs-14.5nC @ 10V-
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