BUK9K6R8-40EX vs BUK9K6R2-40E,115 vs BUK9K6R8-40E

 
PartNumberBUK9K6R8-40EXBUK9K6R2-40E,115BUK9K6R8-40E
DescriptionMOSFET BUK9K6R8-40E/LFPAK56D/REEL 7MOSFET Dual N-channel 40 V 6.2 mo FETRF Bipolar Transistors MOSFET 40V Mosfet Dual N-Channel
ManufacturerNexperiaNexperiaNXP Semiconductors
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSEY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseLFPAK56D-8LFPAK56D-8-
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance5 mOhms, 5 mOhms5.27 mOhms-
Vgs th Gate Source Threshold Voltage1.4 V1.7 V-
Vgs Gate Source Voltage10 V15 V-
Qg Gate Charge22.2 nC, 22.2 nC35.4 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation64 W68 W-
ConfigurationDualDualDual
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101-
PackagingReelReelReel
Transistor Type2 N-Channel2 N-Channel2 N-Channel
BrandNexperiaNexperia-
Fall Time20 ns, 20 ns19.8 ns20 ns
Product TypeMOSFETMOSFET-
Rise Time22 ns, 22 ns7.1 ns22 ns
Factory Pack Quantity15001500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns, 27 ns44.4 ns27 ns
Typical Turn On Delay Time13 ns, 13 ns6 ns13 ns
Unit Weight-0.004173 oz0.017870 oz
Package Case--SO-8
Pd Power Dissipation--64 W
Vgs Gate Source Voltage--10 V
Id Continuous Drain Current--40 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--1.7 V
Rds On Drain Source Resistance--6 mOhms
Qg Gate Charge--22.2 nC
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